| dc.contributor.author |
Theodoropoulou, S |
en |
| dc.contributor.author |
Papadimitriou, D |
en |
| dc.contributor.author |
Mamalis, A |
en |
| dc.contributor.author |
Manolakos, D |
en |
| dc.contributor.author |
Klenk, R |
en |
| dc.contributor.author |
Lux-Steiner, M |
en |
| dc.date.accessioned |
2014-06-06T06:47:30Z |
|
| dc.date.available |
2014-06-06T06:47:30Z |
|
| dc.date.issued |
2007 |
en |
| dc.identifier.uri |
http://dx.doi.org/10.1088/0268-1242/22/8/019 |
en |
| dc.identifier.uri |
http://62.217.125.90/xmlui/handle/123456789/3635 |
|
| dc.subject |
Band Gap |
en |
| dc.subject |
Energy Gap |
en |
| dc.subject |
Material Properties |
en |
| dc.subject |
Optical Properties |
en |
| dc.subject |
Solar Cell |
en |
| dc.title |
Bandgap energies and strain effects in CuIn1-xGaxS2 based solar cells |
en |
| heal.type |
journalArticle |
en |
| heal.identifier.primary |
10.1088/0268-1242/22/8/019 |
en |
| heal.publicationDate |
2007 |
en |
| heal.abstract |
The optical properties of CuIn1-xGaxS2 (CIGS) polycrystalline films and solar cells were characterized by room and low (20 K) temperature photoreflectance (PR) and electroreflectance (ER) spectroscopy for two different compositions of the CIGS absorber ([Ga]/([In]+[Ga]) = 0.04 and 0.12). The Ea and Eb band energies of the three-split energy gap of ternary and quaternary absorbers were determined at room (300 |
en |
| heal.journalName |
Semiconductor Science and Technology |
en |
| dc.identifier.doi |
10.1088/0268-1242/22/8/019 |
en |