| dc.contributor.author |
Gogolides, E |
en |
| dc.contributor.author |
Argitis, P |
en |
| dc.contributor.author |
Couladouros, EA |
en |
| dc.contributor.author |
Vidali, VP |
en |
| dc.contributor.author |
Vasilopoulou, M |
en |
| dc.contributor.author |
Cordoyiannis, G |
en |
| dc.contributor.author |
Diakoumakos, CD |
en |
| dc.contributor.author |
Tserepi, A |
en |
| dc.date.accessioned |
2014-06-06T06:45:35Z |
|
| dc.date.available |
2014-06-06T06:45:35Z |
|
| dc.date.issued |
2003 |
en |
| dc.identifier.issn |
10711023 |
en |
| dc.identifier.uri |
http://dx.doi.org/10.1116/1.1535930 |
en |
| dc.identifier.uri |
http://62.217.125.90/xmlui/handle/123456789/2523 |
|
| dc.subject.other |
Adamantanes |
en |
| dc.subject.other |
Anthracenes |
en |
| dc.subject.other |
Ohnishi number |
en |
| dc.subject.other |
Photoresist etch resistance enhancement |
en |
| dc.subject.other |
Polycarbocylic derivatives |
en |
| dc.subject.other |
Steroids |
en |
| dc.subject.other |
Additives |
en |
| dc.subject.other |
Chemical resistance |
en |
| dc.subject.other |
Functionally graded materials |
en |
| dc.subject.other |
Organic polymers |
en |
| dc.subject.other |
Photolithography |
en |
| dc.subject.other |
Plasma etching |
en |
| dc.subject.other |
Polymethyl methacrylates |
en |
| dc.subject.other |
Synthesis (chemical) |
en |
| dc.subject.other |
Photoresists |
en |
| dc.title |
Photoresist etch resistance enhancement using novel polycarbocyclic derivatives as additives |
en |
| heal.type |
journalArticle |
en |
| heal.identifier.primary |
10.1116/1.1535930 |
en |
| heal.publicationDate |
2003 |
en |
| heal.abstract |
An overview is given of novel photoresist etch resistance promoters characterized by the presence of at least two polycarbocyclic moieties in their molecular, where at least one of them is anthracene derivative. The requirement for etch resistance enhancement is that the Ohnishi number of the additives is lower compared to the original photoresist, or in other terms, the ring Parameter of the additive is higher compared to the ring parameter of the original photoresist. |
en |
| heal.journalName |
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
en |
| dc.identifier.issue |
1 SPEC. |
en |
| dc.identifier.volume |
21 |
en |
| dc.identifier.doi |
10.1116/1.1535930 |
en |
| dc.identifier.spage |
141 |
en |
| dc.identifier.epage |
147 |
en |